TK16G60W MOSFET. Datasheet pdf. Equivalent
Type Designator: TK16G60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
|Id|ⓘ - Maximum Drain Current: 15.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 38 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: D2PAK
TK16G60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK16G60W Datasheet (PDF)
tk16g60w.pdf
TK16G60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16G60WTK16G60WTK16G60WTK16G60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
tk16g60w5.pdf
TK16G60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16G60W5TK16G60W5TK16G60W5TK16G60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by used to Super Junction Str
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