TK16G60W5 Datasheet. Specs and Replacement

Type Designator: TK16G60W5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: D2PAK

TK16G60W5 substitution

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TK16G60W5 datasheet

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 tk16g60w5.pdf pdf_icon

TK16G60W5

TK16G60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK16G60W5 TK16G60W5 TK16G60W5 TK16G60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.18 (typ.) by used to Super Junction Str... See More ⇒

 6.1. Size:244K  toshiba
 tk16g60w.pdf pdf_icon

TK16G60W5

TK16G60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16G60W TK16G60W TK16G60W TK16G60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒

Detailed specifications: TK15S04N1L, TK160F10N1, TK16A60W, TK16A60W5, TK16C60W, TK16E60W, TK16E60W5, TK16G60W, IRLB4132, TK16J60W, TK16J60W5, TK16N60W, TK16N60W5, TK16V60W, TK16V60W5, TK17A80W, TK17C65W

Keywords - TK16G60W5 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.