All MOSFET. TK16G60W5 Datasheet

 

TK16G60W5 Datasheet and Replacement


   Type Designator: TK16G60W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: D2PAK
 

 TK16G60W5 substitution

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TK16G60W5 Datasheet (PDF)

 ..1. Size:243K  toshiba
 tk16g60w5.pdf pdf_icon

TK16G60W5

TK16G60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16G60W5TK16G60W5TK16G60W5TK16G60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by used to Super Junction Str

 6.1. Size:244K  toshiba
 tk16g60w.pdf pdf_icon

TK16G60W5

TK16G60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16G60WTK16G60WTK16G60WTK16G60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

Datasheet: TK15S04N1L , TK160F10N1 , TK16A60W , TK16A60W5 , TK16C60W , TK16E60W , TK16E60W5 , TK16G60W , 5N60 , TK16J60W , TK16J60W5 , TK16N60W , TK16N60W5 , TK16V60W , TK16V60W5 , TK17A80W , TK17C65W .

History: QM3006M3 | IPT026N10N5 | NX7002BK | FDS4072N3 | AUIRFP4468

Keywords - TK16G60W5 MOSFET datasheet

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