All MOSFET. TK16G60W5 Datasheet

 

TK16G60W5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK16G60W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 15.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: D2PAK

 TK16G60W5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK16G60W5 Datasheet (PDF)

 ..1. Size:243K  toshiba
tk16g60w5.pdf

TK16G60W5 TK16G60W5

TK16G60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16G60W5TK16G60W5TK16G60W5TK16G60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by used to Super Junction Str

 6.1. Size:244K  toshiba
tk16g60w.pdf

TK16G60W5 TK16G60W5

TK16G60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16G60WTK16G60WTK16G60WTK16G60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMM90R360S

 

 
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