TK17A80W
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK17A80W
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 42
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29
Ohm
Package:
TO-220SIS
TK17A80W
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK17A80W
Datasheet (PDF)
..1. Size:409K toshiba
tk17a80w.pdf 
TK17A80WMOSFETs Silicon N-Channel MOS (DTMOS)TK17A80WTK17A80WTK17A80WTK17A80W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhan
..2. Size:253K inchange semiconductor
tk17a80w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A80WITK17A80WFEATURESLow drain-source on-resistance: RDS(ON) = 0.25 (typ.)Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.85mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(
9.1. Size:229K toshiba
tk17a65u.pdf
TK17A65UMOSFETs Silicon N-Channel MOS (DTMOS)TK17A65UTK17A65UTK17A65UTK17A65U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.20 (typ.)(2) High forward transfer admittance: |Yfs| = 12.0 S (typ.)(3) Low leakage current: ID
9.2. Size:236K toshiba
tk17a65w5.pdf
TK17A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK17A65W5TK17A65W5TK17A65W5TK17A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.) by used to Super Junction Str
9.3. Size:237K toshiba
tk17a65w.pdf
TK17A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK17A65WTK17A65WTK17A65WTK17A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.17 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
9.4. Size:227K toshiba
tk17a25d.pdf
TK17A25DMOSFETs Silicon N-Channel MOS (-MOS)TK17A25DTK17A25DTK17A25DTK17A25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth =
9.5. Size:253K inchange semiconductor
tk17a65u.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A65UITK17A65UFEATURESLow drain-source on-resistance: RDS(ON) = 0.20 (typ.)Low leakage current: IDSS = 100 A (max) (VDS = 650 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONS
9.6. Size:253K inchange semiconductor
tk17a65w5.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A65W5ITK17A65W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.19 (typ.)Enhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.9mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
9.7. Size:253K inchange semiconductor
tk17a65w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A65WITK17A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.2Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.9mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)
9.8. Size:252K inchange semiconductor
tk17a25d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A25DITK17A25DFEATURESLow drain-source on-resistance:RDS(ON) = 0.11 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
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