TK17A80W - Даташиты. Аналоги. Основные параметры

TK17A80WMOSFETs Silicon N-Channel MOS (DTMOS)TK17A80WTK17A80WTK17A80WTK17A80W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhan

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A80WITK17A80WFEATURESLow drain-source on-resistance: RDS(ON) = 0.25 (typ.)Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.85mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

TK17A65UMOSFETs Silicon N-Channel MOS (DTMOS)TK17A65UTK17A65UTK17A65UTK17A65U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.20 (typ.)(2) High forward transfer admittance: |Yfs| = 12.0 S (typ.)(3) Low leakage current: ID

TK17A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK17A65W5TK17A65W5TK17A65W5TK17A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.) by used to Super Junction Str

TK17A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK17A65WTK17A65WTK17A65WTK17A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.17 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

TK17A25DMOSFETs Silicon N-Channel MOS (-MOS)TK17A25DTK17A25DTK17A25DTK17A25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth =

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A65UITK17A65UFEATURESLow drain-source on-resistance: RDS(ON) = 0.20 (typ.)Low leakage current: IDSS = 100 A (max) (VDS = 650 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONS

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A65W5ITK17A65W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.19 (typ.)Enhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.9mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A65WITK17A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.2Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.9mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A25DITK17A25DFEATURESLow drain-source on-resistance:RDS(ON) = 0.11 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS