TK17C65W MOSFET. Datasheet pdf. Equivalent
Type Designator: TK17C65W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 17.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: I2PAK
TK17C65W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK17C65W Datasheet (PDF)
..1. Size:243K toshiba
tk17c65w.pdf
tk17c65w.pdf
TK17C65WMOSFETs Silicon N-Channel MOS (DTMOS)TK17C65WTK17C65WTK17C65WTK17C65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.17 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
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