All MOSFET. TK17N65W Datasheet

 

TK17N65W Datasheet and Replacement


   Type Designator: TK17N65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 17.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-247
 

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TK17N65W Datasheet (PDF)

 ..1. Size:247K  toshiba
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TK17N65W

TK17N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK17N65WTK17N65WTK17N65WTK17N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.17 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 9.1. Size:299K  st
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TK17N65W

 9.2. Size:88K  ixys
 ixtk17n120l ixtx17n120l.pdf pdf_icon

TK17N65W

Advance Technical InformationIXTK17N120L VDSS = 1200 VLinear Power MOSFETIXTX17N120L ID25 = 17 AWith Extended FBSOA RDS(on) 0.99 N-Channel Enhancement ModeTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VGDVGS Continuous 30 VS(TAB)VGSM Transient

Datasheet: TK16J60W5 , TK16N60W , TK16N60W5 , TK16V60W , TK16V60W5 , TK17A80W , TK17C65W , TK17E65W , 4N60 , TK17V65W , TK18E10K3 , TK200F04N1L , TK20A60W , TK20A60W5 , TK20C60W , TK20E60W , TK20E60W5 .

History: SM6008NF | AP60SL600AIN | DH045N06E | 2SK1813 | HAT2174N

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