TK17N65W Datasheet. Specs and Replacement
Type Designator: TK17N65W 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 17.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-247
TK17N65W substitution
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TK17N65W datasheet
tk17n65w.pdf
TK17N65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK17N65W TK17N65W TK17N65W TK17N65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.17 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒
Detailed specifications: TK16J60W5, TK16N60W, TK16N60W5, TK16V60W, TK16V60W5, TK17A80W, TK17C65W, TK17E65W, 12N60, TK17V65W, TK18E10K3, TK200F04N1L, TK20A60W, TK20A60W5, TK20C60W, TK20E60W, TK20E60W5
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: HGN021N06SL
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