TK17N65W MOSFET. Datasheet pdf. Equivalent
Type Designator: TK17N65W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 17.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-247
TK17N65W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK17N65W Datasheet (PDF)
tk17n65w.pdf
TK17N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK17N65WTK17N65WTK17N65WTK17N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.17 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
ixtk17n120l ixtx17n120l.pdf
Advance Technical InformationIXTK17N120L VDSS = 1200 VLinear Power MOSFETIXTX17N120L ID25 = 17 AWith Extended FBSOA RDS(on) 0.99 N-Channel Enhancement ModeTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VGDVGS Continuous 30 VS(TAB)VGSM Transient
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
