TK20C60W Datasheet and Replacement
Type Designator: TK20C60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
Package: I2PAK
TK20C60W substitution
TK20C60W Datasheet (PDF)
tk20c60w.pdf

TK20C60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20C60WTK20C60WTK20C60WTK20C60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
Datasheet: TK17C65W , TK17E65W , TK17N65W , TK17V65W , TK18E10K3 , TK200F04N1L , TK20A60W , TK20A60W5 , IRLB4132 , TK20E60W , TK20E60W5 , TK20G60W , TK20J60W , TK20J60W5 , TK20N60W , TK20N60W5 , TK20V60W .
History: MPSW65M092CFD | PSMN3R0-60PS
Keywords - TK20C60W MOSFET datasheet
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History: MPSW65M092CFD | PSMN3R0-60PS



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