TK20C60W Datasheet. Specs and Replacement
Type Designator: TK20C60W 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
Package: I2PAK
TK20C60W substitution
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TK20C60W datasheet
tk20c60w.pdf
TK20C60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20C60W TK20C60W TK20C60W TK20C60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒
Detailed specifications: TK17C65W, TK17E65W, TK17N65W, TK17V65W, TK18E10K3, TK200F04N1L, TK20A60W, TK20A60W5, CS150N03A8, TK20E60W, TK20E60W5, TK20G60W, TK20J60W, TK20J60W5, TK20N60W, TK20N60W5, TK20V60W
Keywords - TK20C60W MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SIB408DK
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