All MOSFET. TK20G60W Datasheet

 

TK20G60W Datasheet and Replacement


   Type Designator: TK20G60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: D2PAK
 

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TK20G60W Datasheet (PDF)

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TK20G60W

TK20G60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20G60WTK20G60WTK20G60WTK20G60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

Datasheet: TK17V65W , TK18E10K3 , TK200F04N1L , TK20A60W , TK20A60W5 , TK20C60W , TK20E60W , TK20E60W5 , 20N50 , TK20J60W , TK20J60W5 , TK20N60W , TK20N60W5 , TK20V60W , TK20V60W5 , TK22A10N1 , TK22E10N1 .

History: STL40N10F7 | UPA1913 | LSGE06R034W3 | SVS7N60DD2TR | APT12067LLLG | UPA1930 | P3606BEA

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