All MOSFET. TK20V60W Datasheet

 

TK20V60W MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK20V60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: DFN8X8

 TK20V60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK20V60W Datasheet (PDF)

 ..1. Size:239K  toshiba
 tk20v60w.pdf

TK20V60W TK20V60W

TK20V60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20V60WTK20V60WTK20V60WTK20V60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.136 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 0.1. Size:270K  toshiba
 tk20v60w5.pdf

TK20V60W TK20V60W

TK20V60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20V60W5TK20V60W5TK20V60W5TK20V60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.156 (typ.)(3) Easy to control Gate switc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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