All MOSFET. TK20V60W Datasheet

 

TK20V60W Datasheet and Replacement


   Type Designator: TK20V60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: DFN8X8
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TK20V60W Datasheet (PDF)

 ..1. Size:239K  toshiba
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TK20V60W

TK20V60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20V60WTK20V60WTK20V60WTK20V60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.136 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 0.1. Size:270K  toshiba
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TK20V60W

TK20V60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20V60W5TK20V60W5TK20V60W5TK20V60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.156 (typ.)(3) Easy to control Gate switc

Datasheet: TK20C60W , TK20E60W , TK20E60W5 , TK20G60W , TK20J60W , TK20J60W5 , TK20N60W , TK20N60W5 , 13N50 , TK20V60W5 , TK22A10N1 , TK22E10N1 , TK25A60X , TK25A60X5 , TK25E60X , TK25E60X5 , TK25N60X .

History: SE6003C | HUF75925D3ST | SFF11N80P | SI2308 | FDU3706 | SDF250JAB | UTT4815

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