All MOSFET. TK25V60X Datasheet

 

TK25V60X MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK25V60X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: DFN8X8

 TK25V60X Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK25V60X Datasheet (PDF)

 ..1. Size:238K  toshiba
 tk25v60x.pdf

TK25V60X TK25V60X

TK25V60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK25V60XTK25V60XTK25V60XTK25V60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties with

 0.1. Size:365K  toshiba
 tk25v60x5.pdf

TK25V60X TK25V60X

TK25V60X5MOSFETs Silicon N-Channel MOS (DTMOS)TK25V60X5TK25V60X5TK25V60X5TK25V60X51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 120 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.125 (typ.)(3) Easy to control Gate switc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK3483 | NCE60NF055D

 

 
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