TK25V60X Datasheet. Specs and Replacement
Type Designator: TK25V60X 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: DFN8X8
TK25V60X substitution
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TK25V60X datasheet
tk25v60x.pdf
TK25V60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25V60X TK25V60X TK25V60X TK25V60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.11 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties with... See More ⇒
tk25v60x5.pdf
TK25V60X5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK25V60X5 TK25V60X5 TK25V60X5 TK25V60X5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 120 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.125 (typ.) (3) Easy to control Gate switc... See More ⇒
Detailed specifications: TK22E10N1, TK25A60X, TK25A60X5, TK25E60X, TK25E60X5, TK25N60X, TK25N60X5, TK25S06N1L, IRF520, TK25V60X5, TK28A65W, TK28E65W, TK28N65W, TK28N65W5, TK28V65W, TK2P90E, TK30A06N1
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