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TK28A65W Specs and Replacement

Type Designator: TK28A65W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 27.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO-220SIS

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TK28A65W datasheet

 ..1. Size:293K  toshiba
 tk28a65w.pdf pdf_icon

TK28A65W

TK28A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK28A65W TK28A65W TK28A65W TK28A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.094 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enha... See More ⇒

 ..2. Size:253K  inchange semiconductor
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TK28A65W

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK28A65W ITK28A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.094 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=1.6mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: TK25A60X5, TK25E60X, TK25E60X5, TK25N60X, TK25N60X5, TK25S06N1L, TK25V60X, TK25V60X5, STF13NM60N, TK28E65W, TK28N65W, TK28N65W5, TK28V65W, TK2P90E, TK30A06N1, TK30E06N1, TK31A60W

Keywords - TK28A65W MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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