All MOSFET. TK28V65W Datasheet

 

TK28V65W MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK28V65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 27.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: DFN8X8

 TK28V65W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK28V65W Datasheet (PDF)

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 tk28v65w.pdf

TK28V65W TK28V65W

TK28V65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28V65WTK28V65WTK28V65WTK28V65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.099 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FTK7N60P | SIHLI640G

 

 
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