All MOSFET. TK2P90E Datasheet

 

TK2P90E MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK2P90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.9 Ohm
   Package: DPAK

 TK2P90E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK2P90E Datasheet (PDF)

 ..1. Size:326K  toshiba
 tk2p90e.pdf

TK2P90E TK2P90E

TK2P90EMOSFETs Silicon N-Channel MOS (-MOS)TK2P90ETK2P90ETK2P90ETK2P90E1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.7 (typ.)(2) Low leakage current : IDSS = 10 A (max) (VDS = 720 V)(3) Enhancement mode: Vth = 2.5

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top