TK2P90E MOSFET Datasheet: N-Ch, 900V, 2A. Full specification with pinout and replacement list

TK2P90E Specs and Replacement

Type Designator: TK2P90E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.9 Ohm

Package: DPAK

TK2P90E substitution

- MOSFET ⓘ Cross-Reference Search

TK2P90E datasheet

..1. Size:326K toshiba
tk2p90e.pdf pdf_icon

TK2P90E MOSFETs Silicon N-Channel MOS ( -MOS ) TK2P90E TK2P90E TK2P90E TK2P90E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 4.7 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 720 V) (3) Enhancement mode Vth = 2.5 ... See More ⇒

Detailed specifications: TK25S06N1L, TK25V60X, TK25V60X5, TK28A65W, TK28E65W, TK28N65W, TK28N65W5, TK28V65W, 75N75, TK30A06N1, TK30E06N1, TK31A60W, TK31E60W, TK31E60X, TK31J60W, TK31J60W5, TK31N60W