All MOSFET. TK30E06N1 Datasheet

 

TK30E06N1 Datasheet and Replacement


   Type Designator: TK30E06N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.3 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-220
 

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TK30E06N1 Datasheet (PDF)

 ..1. Size:246K  toshiba
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TK30E06N1

TK30E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK30E06N1TK30E06N1TK30E06N1TK30E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 12.2 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3) Enha

 ..2. Size:246K  inchange semiconductor
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TK30E06N1

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK30E06N1ITK30E06N1FEATURESLow drain-source on-resistance:RDS(on) 15.0m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=0.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MA

Datasheet: TK25V60X5 , TK28A65W , TK28E65W , TK28N65W , TK28N65W5 , TK28V65W , TK2P90E , TK30A06N1 , IRF730 , TK31A60W , TK31E60W , TK31E60X , TK31J60W , TK31J60W5 , TK31N60W , TK31N60W5 , TK31N60X .

History: WM03DN85A | SQJ964EP

Keywords - TK30E06N1 MOSFET datasheet

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