All MOSFET. TK31E60X Datasheet

 

TK31E60X Datasheet and Replacement


   Type Designator: TK31E60X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: TO-220
 

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TK31E60X Datasheet (PDF)

 ..1. Size:251K  toshiba
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TK31E60X

TK31E60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK31E60XTK31E60XTK31E60XTK31E60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

 7.1. Size:258K  toshiba
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TK31E60X

TK31E60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31E60WTK31E60WTK31E60WTK31E60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:246K  inchange semiconductor
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TK31E60X

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK31E60WITK31E60WFEATURESLow drain-source on-resistance:RDS(on) 0.088.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=1.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Datasheet: TK28N65W , TK28N65W5 , TK28V65W , TK2P90E , TK30A06N1 , TK30E06N1 , TK31A60W , TK31E60W , MMIS60R580P , TK31J60W , TK31J60W5 , TK31N60W , TK31N60W5 , TK31N60X , TK31V60W , TK31V60W5 , TK31V60X .

History: JMSL1010PGS | TPCS8213

Keywords - TK31E60X MOSFET datasheet

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