All MOSFET. TK33S10N1Z Datasheet

 

TK33S10N1Z Datasheet and Replacement


   Type Designator: TK33S10N1Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 1070 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
   Package: DPAK
 

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TK33S10N1Z Datasheet (PDF)

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TK33S10N1Z

TK33S10N1ZMOSFETs Silicon N-channel MOS (U-MOS-H)TK33S10N1ZTK33S10N1ZTK33S10N1ZTK33S10N1Z1. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) AEC-Q101 qualified(2) Low drain-source on-resistance: RDS(ON) = 8.2 m (typ.) (VGS = 10 V)(3)

Datasheet: TK31N60W , TK31N60W5 , TK31N60X , TK31V60W , TK31V60W5 , TK31V60X , TK32A12N1 , TK32E12N1 , 2N7002 , TK34A10N1 , TK34E10N1 , TK35A08N1 , TK35A65W , TK35A65W5 , TK35E08N1 , TK35N65W , TK35N65W5 .

History: AOSP66925 | IXTX120N65X2 | NCE65N230I | AP6900GSM | 2SK371 | NTDV20N06 | P2803BMG

Keywords - TK33S10N1Z MOSFET datasheet

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