TK33S10N1Z Specs and Replacement
Type Designator: TK33S10N1Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.4 nS
Cossⓘ - Output Capacitance: 1070 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
Package: DPAK
TK33S10N1Z substitution
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TK33S10N1Z datasheet
tk33s10n1z.pdf
TK33S10N1Z MOSFETs Silicon N-channel MOS (U-MOS -H) TK33S10N1Z TK33S10N1Z TK33S10N1Z TK33S10N1Z 1. Applications 1. Applications 1. Applications 1. Applications Automotive Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance RDS(ON) = 8.2 m (typ.) (VGS = 10 V) (3) ... See More ⇒
Detailed specifications: TK31N60W, TK31N60W5, TK31N60X, TK31V60W, TK31V60W5, TK31V60X, TK32A12N1, TK32E12N1, MMIS60R580P, TK34A10N1, TK34E10N1, TK35A08N1, TK35A65W, TK35A65W5, TK35E08N1, TK35N65W, TK35N65W5
Keywords - TK33S10N1Z MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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