All MOSFET. TK34A10N1 Datasheet

 

TK34A10N1 Datasheet and Replacement


   Type Designator: TK34A10N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-220SIS
 

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TK34A10N1 Datasheet (PDF)

 ..1. Size:238K  toshiba
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TK34A10N1

TK34A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK34A10N1TK34A10N1TK34A10N1TK34A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 7.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha

 ..2. Size:253K  inchange semiconductor
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TK34A10N1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK34A10N1ITK34A10N1FEATURESLow drain-source on-resistance:RDS(ON) = 7.9 m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOL

Datasheet: TK31N60W5 , TK31N60X , TK31V60W , TK31V60W5 , TK31V60X , TK32A12N1 , TK32E12N1 , TK33S10N1Z , HY1906P , TK34E10N1 , TK35A08N1 , TK35A65W , TK35A65W5 , TK35E08N1 , TK35N65W , TK35N65W5 , TK39A60W .

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