TK35A65W MOSFET Datasheet: N-Ch, 650V, 35A. Full specification with pinout and replacement list

TK35A65W Specs and Replacement

Type Designator: TK35A65W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO-220SIS

TK35A65W substitution

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TK35A65W datasheet

..1. Size:237K toshiba
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TK35A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK35A65W TK35A65W TK35A65W TK35A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.068 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enh... See More ⇒

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TK35A65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK35A65W5 TK35A65W5 TK35A65W5 TK35A65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 130 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.08 (typ.) by using Super Junction Struc... See More ⇒

0.2. Size:253K inchange semiconductor
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK35A65W5 ITK35A65W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.08 (typ.) Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING... See More ⇒

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TK35A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK35A08N1 TK35A08N1 TK35A08N1 TK35A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 10.0 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enha... See More ⇒