TK35A65W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK35A65W
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 35 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 100 nC
Время нарастания (tr): 30 ns
Выходная емкость (Cd): 90 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
Тип корпуса: TO-220SIS
TK35A65W Datasheet (PDF)
tk35a65w.pdf
TK35A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK35A65WTK35A65WTK35A65WTK35A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.068 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enh
tk35a65w5.pdf
TK35A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK35A65W5TK35A65W5TK35A65W5TK35A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 130 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.08 (typ.) by using Super Junction Struc
tk35a65w5.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK35A65W5ITK35A65W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.08 (typ.)Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING
tk35a08n1.pdf
TK35A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK35A08N1TK35A08N1TK35A08N1TK35A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 10.0 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enha
tk35a08n1.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK35A08N1ITK35A08N1FEATURESLow drain-source on-resistance:RDS(ON) = 12.0m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX
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