Справочник MOSFET. TK35A65W

 

TK35A65W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK35A65W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO-220SIS

 Аналог (замена) для TK35A65W

 

 

TK35A65W Datasheet (PDF)

 ..1. Size:237K  toshiba
 tk35a65w.pdf

TK35A65W TK35A65W

TK35A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK35A65WTK35A65WTK35A65WTK35A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.068 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enh

 0.1. Size:240K  toshiba
 tk35a65w5.pdf

TK35A65W TK35A65W

TK35A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK35A65W5TK35A65W5TK35A65W5TK35A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 130 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.08 (typ.) by using Super Junction Struc

 0.2. Size:253K  inchange semiconductor
 tk35a65w5.pdf

TK35A65W TK35A65W

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK35A65W5ITK35A65W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.08 (typ.)Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=2.1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

 9.1. Size:232K  toshiba
 tk35a08n1.pdf

TK35A65W TK35A65W

TK35A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK35A08N1TK35A08N1TK35A08N1TK35A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 10.0 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enha

 9.2. Size:252K  inchange semiconductor
 tk35a08n1.pdf

TK35A65W TK35A65W

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK35A08N1ITK35A08N1FEATURESLow drain-source on-resistance:RDS(ON) = 12.0m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX

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