All MOSFET. TK35N65W5 Datasheet

 

TK35N65W5 Datasheet and Replacement


   Type Designator: TK35N65W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-247
 

 TK35N65W5 substitution

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TK35N65W5 Datasheet (PDF)

 ..1. Size:249K  toshiba
tk35n65w5.pdf pdf_icon

TK35N65W5

TK35N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK35N65W5TK35N65W5TK35N65W5TK35N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 130 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.08 (typ.) by used to Super Junction Str

 6.1. Size:246K  toshiba
tk35n65w.pdf pdf_icon

TK35N65W5

TK35N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK35N65WTK35N65WTK35N65WTK35N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.068 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 9.1. Size:668K  first silicon
ftk35n33pdfn56.pdf pdf_icon

TK35N65W5

SEMICONDUCTORFTK35N03PDFN56TECHNICAL DATAN-Channel Power MOSFETPDFN56-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

 9.2. Size:586K  first silicon
ftk35n03pdfn33.pdf pdf_icon

TK35N65W5

SEMICONDUCTORFTK35N03PDFN33TECHNICAL DATAN-Channel Power MOSFETDESCRIPTION PDFN3.33.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char

Datasheet: TK33S10N1Z , TK34A10N1 , TK34E10N1 , TK35A08N1 , TK35A65W , TK35A65W5 , TK35E08N1 , TK35N65W , IRF3205 , TK39A60W , TK39J60W , TK39J60W5 , TK39N60W , TK39N60W5 , TK39N60X , TK3P80E , TK40A06N1 .

History: 2SK3305-S

Keywords - TK35N65W5 MOSFET datasheet

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