TK35N65W5 MOSFET Datasheet: N-Ch, 650V, 35A. Full specification with pinout and replacement list

TK35N65W5 Specs and Replacement

Type Designator: TK35N65W5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: TO-247

TK35N65W5 substitution

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TK35N65W5 datasheet

..1. Size:249K toshiba
tk35n65w5.pdf pdf_icon

TK35N65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK35N65W5 TK35N65W5 TK35N65W5 TK35N65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 130 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.08 (typ.) by used to Super Junction Str... See More ⇒

6.1. Size:246K toshiba
tk35n65w.pdf pdf_icon

TK35N65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK35N65W TK35N65W TK35N65W TK35N65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.068 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

9.1. Size:668K first silicon
ftk35n33pdfn56.pdf pdf_icon

SEMICONDUCTOR FTK35N03PDFN56 TECHNICAL DATA N-Channel Power MOSFET PDFN5 6-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte... See More ⇒

9.2. Size:586K first silicon
ftk35n03pdfn33.pdf pdf_icon

SEMICONDUCTOR FTK35N03PDFN33 TECHNICAL DATA N-Channel Power MOSFET DESCRIPTION PDFN3.3 3.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char... See More ⇒

Detailed specifications: TK33S10N1Z, TK34A10N1, TK34E10N1, TK35A08N1, TK35A65W, TK35A65W5, TK35E08N1, TK35N65W, IRF3205, TK39A60W, TK39J60W, TK39J60W5, TK39N60W, TK39N60W5, TK39N60X, TK3P80E, TK40A06N1