Справочник MOSFET. TK35N65W5

 

TK35N65W5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK35N65W5
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 270 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для TK35N65W5

 

 

TK35N65W5 Datasheet (PDF)

 ..1. Size:249K  toshiba
 tk35n65w5.pdf

TK35N65W5 TK35N65W5

TK35N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK35N65W5TK35N65W5TK35N65W5TK35N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 130 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.08 (typ.) by used to Super Junction Str

 6.1. Size:246K  toshiba
 tk35n65w.pdf

TK35N65W5 TK35N65W5

TK35N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK35N65WTK35N65WTK35N65WTK35N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.068 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 9.1. Size:668K  first silicon
 ftk35n33pdfn56.pdf

TK35N65W5 TK35N65W5

SEMICONDUCTORFTK35N03PDFN56TECHNICAL DATAN-Channel Power MOSFETPDFN56-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

 9.2. Size:586K  first silicon
 ftk35n03pdfn33.pdf

TK35N65W5 TK35N65W5

SEMICONDUCTORFTK35N03PDFN33TECHNICAL DATAN-Channel Power MOSFETDESCRIPTION PDFN3.33.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top