TK35N65W5 - описание и поиск аналогов

 

TK35N65W5. Аналоги и основные параметры

Наименование производителя: TK35N65W5

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 270 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 55 ns

Cossⓘ - Выходная емкость: 90 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm

Тип корпуса: TO-247

Аналог (замена) для TK35N65W5

- подборⓘ MOSFET транзистора по параметрам

 

TK35N65W5 даташит

 ..1. Size:249K  toshiba
tk35n65w5.pdfpdf_icon

TK35N65W5

TK35N65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK35N65W5 TK35N65W5 TK35N65W5 TK35N65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 130 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.08 (typ.) by used to Super Junction Str

 6.1. Size:246K  toshiba
tk35n65w.pdfpdf_icon

TK35N65W5

TK35N65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK35N65W TK35N65W TK35N65W TK35N65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.068 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 9.1. Size:668K  first silicon
ftk35n33pdfn56.pdfpdf_icon

TK35N65W5

SEMICONDUCTOR FTK35N03PDFN56 TECHNICAL DATA N-Channel Power MOSFET PDFN5 6-8L DESCRIPTION The FTK35N03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

 9.2. Size:586K  first silicon
ftk35n03pdfn33.pdfpdf_icon

TK35N65W5

SEMICONDUCTOR FTK35N03PDFN33 TECHNICAL DATA N-Channel Power MOSFET DESCRIPTION PDFN3.3 3.3-8L The FTK35N03PDFN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully char

Другие MOSFET... TK33S10N1Z , TK34A10N1 , TK34E10N1 , TK35A08N1 , TK35A65W , TK35A65W5 , TK35E08N1 , TK35N65W , IRF3205 , TK39A60W , TK39J60W , TK39J60W5 , TK39N60W , TK39N60W5 , TK39N60X , TK3P80E , TK40A06N1 .

History: SWP80N08V1 | MVGSF1N02LT1G

 

 

 

 

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