All MOSFET. TK39J60W Datasheet

 

TK39J60W MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK39J60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 270 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V
   Maximum Drain Current |Id|: 38.8 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 110 nC
   Rise Time (tr): 50 nS
   Drain-Source Capacitance (Cd): 90 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm
   Package: TO-3P

 TK39J60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK39J60W Datasheet (PDF)

 ..1. Size:240K  toshiba
 tk39j60w.pdf

TK39J60W TK39J60W

TK39J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK39J60WTK39J60WTK39J60WTK39J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.055 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 0.1. Size:244K  toshiba
 tk39j60w5.pdf

TK39J60W TK39J60W

TK39J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK39J60W5TK39J60W5TK39J60W5TK39J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 150 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.062 (typ.) by using Super Junction Stru

Datasheet: TK34E10N1 , TK35A08N1 , TK35A65W , TK35A65W5 , TK35E08N1 , TK35N65W , TK35N65W5 , TK39A60W , IRF740 , TK39J60W5 , TK39N60W , TK39N60W5 , TK39N60X , TK3P80E , TK40A06N1 , TK40E06N1 , TK40S06N1L .

 

 
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