All MOSFET. TK39N60W5 Datasheet

 

TK39N60W5 Datasheet and Replacement


   Type Designator: TK39N60W5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 38.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
   Package: TO-247
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TK39N60W5 Datasheet (PDF)

 ..1. Size:245K  toshiba
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TK39N60W5

TK39N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK39N60W5TK39N60W5TK39N60W5TK39N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 150 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.062 (typ.) by using Super Junction Stru

 6.1. Size:244K  toshiba
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TK39N60W5

TK39N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK39N60WTK39N60WTK39N60WTK39N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.055 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 6.2. Size:267K  inchange semiconductor
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TK39N60W5

isc N-Channel MOSFET Transistor TK39N60WFEATURESWith TO-247 packagingWith low gate drive requirementsLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 V

 7.1. Size:245K  toshiba
tk39n60x.pdf pdf_icon

TK39N60W5

TK39N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK39N60XTK39N60XTK39N60XTK39N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.055 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRFH5303 | SSW65R190S2 | NCE30P12BS | WMM07N65C4 | APT10021JFLL | NP180N04TUJ | SM4186T9RL

Keywords - TK39N60W5 MOSFET datasheet

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