TK39N60W5. Аналоги и основные параметры
Наименование производителя: TK39N60W5
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 270 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 38.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 120 ns
Cossⓘ - Выходная емкость: 90 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.074 Ohm
Тип корпуса: TO-247
Аналог (замена) для TK39N60W5
- подборⓘ MOSFET транзистора по параметрам
TK39N60W5 даташит
tk39n60w5.pdf
TK39N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK39N60W5 TK39N60W5 TK39N60W5 TK39N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 150 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.062 (typ.) by using Super Junction Stru
tk39n60w.pdf
TK39N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK39N60W TK39N60W TK39N60W TK39N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.055 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E
tk39n60w.pdf
isc N-Channel MOSFET Transistor TK39N60W FEATURES With TO-247 packaging With low gate drive requirements Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V
tk39n60x.pdf
TK39N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK39N60X TK39N60X TK39N60X TK39N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.055 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit
Другие MOSFET... TK35A65W5 , TK35E08N1 , TK35N65W , TK35N65W5 , TK39A60W , TK39J60W , TK39J60W5 , TK39N60W , IRF540 , TK39N60X , TK3P80E , TK40A06N1 , TK40E06N1 , TK40S06N1L , TK42A12N1 , TK42E12N1 , TK45S06K3L .
History: TMP7N90 | WM03N01H
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