TK39N60W5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK39N60W5
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 270 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 38.8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 120 ns
Cossⓘ - Выходная емкость: 90 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.074 Ohm
Тип корпуса: TO-247
TK39N60W5 Datasheet (PDF)
tk39n60w5.pdf
TK39N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK39N60W5TK39N60W5TK39N60W5TK39N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 150 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.062 (typ.) by using Super Junction Stru
tk39n60w.pdf
TK39N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK39N60WTK39N60WTK39N60WTK39N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.055 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk39n60w.pdf
isc N-Channel MOSFET Transistor TK39N60WFEATURESWith TO-247 packagingWith low gate drive requirementsLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 V
tk39n60x.pdf
TK39N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK39N60XTK39N60XTK39N60XTK39N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.055 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918