All MOSFET. TK3P80E Datasheet

 

TK3P80E Datasheet and Replacement


   Type Designator: TK3P80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm
   Package: DPAK
 

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TK3P80E Datasheet (PDF)

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TK3P80E

TK3P80EMOSFETs Silicon N-Channel MOS (-MOS)TK3P80ETK3P80ETK3P80ETK3P80E1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.9 (typ.)(2) Low leakage current : IDSS = 10 A (max) (VDS = 640 V)(3) Enhancement mode: Vth = 2.5

Datasheet: TK35N65W , TK35N65W5 , TK39A60W , TK39J60W , TK39J60W5 , TK39N60W , TK39N60W5 , TK39N60X , IRF640 , TK40A06N1 , TK40E06N1 , TK40S06N1L , TK42A12N1 , TK42E12N1 , TK45S06K3L , TK46A08N1 , TK46E08N1 .

History: CS16N65F | 2SK3994 | STS5N15F4 | 3SK324 | 2SK3677-01MR | GSM3411 | NCEAP4065QU

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