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TK3P80E Specs and Replacement

Type Designator: TK3P80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm

Package: DPAK

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TK3P80E datasheet

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TK3P80E

TK3P80E MOSFETs Silicon N-Channel MOS ( -MOS ) TK3P80E TK3P80E TK3P80E TK3P80E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.9 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 640 V) (3) Enhancement mode Vth = 2.5 ... See More ⇒

Detailed specifications: TK35N65W, TK35N65W5, TK39A60W, TK39J60W, TK39J60W5, TK39N60W, TK39N60W5, TK39N60X, IRFP460, TK40A06N1, TK40E06N1, TK40S06N1L, TK42A12N1, TK42E12N1, TK45S06K3L, TK46A08N1, TK46E08N1

Keywords - TK3P80E MOSFET specs

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