All MOSFET. TK42A12N1 Datasheet

 

TK42A12N1 Datasheet and Replacement


   Type Designator: TK42A12N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: TO-220SIS
 

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TK42A12N1 Datasheet (PDF)

 ..1. Size:233K  toshiba
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TK42A12N1

TK42A12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK42A12N1TK42A12N1TK42A12N1TK42A12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 7.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha

 ..2. Size:252K  inchange semiconductor
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TK42A12N1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK42A12N1ITK42A12N1FEATURESLow drain-source on-resistance:RDS(ON) = 9.4m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

Datasheet: TK39J60W5 , TK39N60W , TK39N60W5 , TK39N60X , TK3P80E , TK40A06N1 , TK40E06N1 , TK40S06N1L , IRFP260N , TK42E12N1 , TK45S06K3L , TK46A08N1 , TK46E08N1 , TK49N65W , TK49N65W5 , TK4P60D , TK4Q60DA .

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