TK42E12N1 PDF and Equivalents Search

 

TK42E12N1 Specs and Replacement

Type Designator: TK42E12N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 490 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm

Package: TO-220

TK42E12N1 substitution

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TK42E12N1 datasheet

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TK42E12N1

TK42E12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK42E12N1 TK42E12N1 TK42E12N1 TK42E12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 7.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enha... See More ⇒

Detailed specifications: TK39N60W, TK39N60W5, TK39N60X, TK3P80E, TK40A06N1, TK40E06N1, TK40S06N1L, TK42A12N1, IRFB4110, TK45S06K3L, TK46A08N1, TK46E08N1, TK49N65W, TK49N65W5, TK4P60D, TK4Q60DA, TK50A04K3

Keywords - TK42E12N1 MOSFET specs

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