TK42E12N1 MOSFET. Datasheet pdf. Equivalent
Type Designator: TK42E12N1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 52 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 490 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
Package: TO-220
TK42E12N1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK42E12N1 Datasheet (PDF)
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tk42e12n1.pdf
tk42e12n1.pdf
TK42E12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK42E12N1TK42E12N1TK42E12N1TK42E12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 7.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha
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