All MOSFET. TK42E12N1 Datasheet

 

TK42E12N1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK42E12N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 88 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: TO-220

 TK42E12N1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK42E12N1 Datasheet (PDF)

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 tk42e12n1.pdf

TK42E12N1 TK42E12N1

TK42E12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK42E12N1TK42E12N1TK42E12N1TK42E12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 7.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRLU024A | BUK9207-30B

 

 
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