TK46A08N1 PDF and Equivalents Search

 

TK46A08N1 Specs and Replacement

Type Designator: TK46A08N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 620 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: TO-220SIS

TK46A08N1 substitution

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TK46A08N1 datasheet

 ..1. Size:235K  toshiba
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TK46A08N1

TK46A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK46A08N1 TK46A08N1 TK46A08N1 TK46A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enhan... See More ⇒

 ..2. Size:253K  inchange semiconductor
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TK46A08N1

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK46A08N1 ITK46A08N1 FEATURES Low drain-source on-resistance RDS(ON) = 8.4m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI... See More ⇒

Detailed specifications: TK39N60X, TK3P80E, TK40A06N1, TK40E06N1, TK40S06N1L, TK42A12N1, TK42E12N1, TK45S06K3L, IRFP260N, TK46E08N1, TK49N65W, TK49N65W5, TK4P60D, TK4Q60DA, TK50A04K3, TK50S04K3L, TK55S10N1

Keywords - TK46A08N1 MOSFET specs

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