All MOSFET. TK46A08N1 Datasheet

 

TK46A08N1 Datasheet and Replacement


   Type Designator: TK46A08N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: TO-220SIS
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TK46A08N1 Datasheet (PDF)

 ..1. Size:235K  toshiba
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TK46A08N1

TK46A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK46A08N1TK46A08N1TK46A08N1TK46A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan

 ..2. Size:253K  inchange semiconductor
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TK46A08N1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK46A08N1ITK46A08N1FEATURESLow drain-source on-resistance:RDS(ON) = 8.4m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STB432S | AOTF360A70L | UT3418 | 2SK3794-Z | MS65R190RGE | IRHM7450

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