TK46E08N1 Specs and Replacement
Type Designator: TK46E08N1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 103 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 620 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: TO-220
TK46E08N1 substitution
- MOSFET ⓘ Cross-Reference Search
TK46E08N1 datasheet
tk46e08n1.pdf
TK46E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK46E08N1 TK46E08N1 TK46E08N1 TK46E08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enhan... See More ⇒
Detailed specifications: TK3P80E, TK40A06N1, TK40E06N1, TK40S06N1L, TK42A12N1, TK42E12N1, TK45S06K3L, TK46A08N1, AO3400, TK49N65W, TK49N65W5, TK4P60D, TK4Q60DA, TK50A04K3, TK50S04K3L, TK55S10N1, TK56A12N1
Keywords - TK46E08N1 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SI2323DS-T1 | 2SK3982-01MR
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