All MOSFET. TK46E08N1 Datasheet

 

TK46E08N1 Datasheet and Replacement


   Type Designator: TK46E08N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 103 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: TO-220
 

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TK46E08N1 Datasheet (PDF)

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TK46E08N1

TK46E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK46E08N1TK46E08N1TK46E08N1TK46E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan

Datasheet: TK3P80E , TK40A06N1 , TK40E06N1 , TK40S06N1L , TK42A12N1 , TK42E12N1 , TK45S06K3L , TK46A08N1 , IRF3710 , TK49N65W , TK49N65W5 , TK4P60D , TK4Q60DA , TK50A04K3 , TK50S04K3L , TK55S10N1 , TK56A12N1 .

History: APQ84SN06A | IXFT30N60X

Keywords - TK46E08N1 MOSFET datasheet

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