All MOSFET. TK46E08N1 Datasheet

 

TK46E08N1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK46E08N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 103 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: TO-220

 TK46E08N1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK46E08N1 Datasheet (PDF)

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 tk46e08n1.pdf

TK46E08N1 TK46E08N1

TK46E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK46E08N1TK46E08N1TK46E08N1TK46E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan

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