All MOSFET. TK49N65W Datasheet

 

TK49N65W Datasheet and Replacement


   Type Designator: TK49N65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 49.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO-247
 

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TK49N65W Datasheet (PDF)

 ..1. Size:248K  toshiba
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TK49N65W

TK49N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK49N65WTK49N65WTK49N65WTK49N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.048 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enh

 0.1. Size:249K  toshiba
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TK49N65W

TK49N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK49N65W5TK49N65W5TK49N65W5TK49N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 145 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.051 (typ.) by using Super Junction Stru

Datasheet: TK40A06N1 , TK40E06N1 , TK40S06N1L , TK42A12N1 , TK42E12N1 , TK45S06K3L , TK46A08N1 , TK46E08N1 , AON6414A , TK49N65W5 , TK4P60D , TK4Q60DA , TK50A04K3 , TK50S04K3L , TK55S10N1 , TK56A12N1 , TK56E12N1 .

History: WSD3056DN | KNY3406C | CEP50P03 | IRF3704ZPBF | JCS740RC | IXTQ182N055T | SPE65R360G

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