TK49N65W5 Specs and Replacement
Type Designator: TK49N65W5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 49.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
Package: TO-247
TK49N65W5 substitution
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TK49N65W5 datasheet
tk49n65w5.pdf
TK49N65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK49N65W5 TK49N65W5 TK49N65W5 TK49N65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 145 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.051 (typ.) by using Super Junction Stru... See More ⇒
tk49n65w.pdf
TK49N65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK49N65W TK49N65W TK49N65W TK49N65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.048 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enh... See More ⇒
Detailed specifications: TK40E06N1, TK40S06N1L, TK42A12N1, TK42E12N1, TK45S06K3L, TK46A08N1, TK46E08N1, TK49N65W, IRF3710, TK4P60D, TK4Q60DA, TK50A04K3, TK50S04K3L, TK55S10N1, TK56A12N1, TK56E12N1, TK58A06N1
Keywords - TK49N65W5 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SI2323DS-T1 | 2SK3982-01MR
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