All MOSFET. TK56E12N1 Datasheet

 

TK56E12N1 Datasheet and Replacement


   Type Designator: TK56E12N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 168 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-220
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TK56E12N1 Datasheet (PDF)

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TK56E12N1

TK56E12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK56E12N1TK56E12N1TK56E12N1TK56E12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 5.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha

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History: MPSU60M600 | HLML6401 | IRFH8330 | AP6N023H | VP0109 | ZXMN2F30FHTA | AP85T03GH-HF

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