All MOSFET. TK56E12N1 Datasheet

 

TK56E12N1 Datasheet and Replacement


   Type Designator: TK56E12N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 168 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-220
 

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TK56E12N1 Datasheet (PDF)

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TK56E12N1

TK56E12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK56E12N1TK56E12N1TK56E12N1TK56E12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 5.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha

Datasheet: TK49N65W , TK49N65W5 , TK4P60D , TK4Q60DA , TK50A04K3 , TK50S04K3L , TK55S10N1 , TK56A12N1 , 7N65 , TK58A06N1 , TK58E06N1 , TK5A60W , TK5A60W5 , TK5A65W , TK5P60W , TK5P60W5 , TK5P65W .

History: BSC077N12NS3G

Keywords - TK56E12N1 MOSFET datasheet

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