TK5A65W
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK5A65W
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 5.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10.5
nC
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 10
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO-220SIS
TK5A65W
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK5A65W
Datasheet (PDF)
..1. Size:371K toshiba
tk5a65w.pdf
TK5A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK5A65WTK5A65WTK5A65WTK5A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement mo
..2. Size:252K inchange semiconductor
tk5a65w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A65WITK5A65WFEATURESLow drain-source on-resistance: RDS(ON) = 1.2 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.17mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
8.1. Size:228K toshiba
tk5a65da.pdf
TK5A65DAMOSFETs Silicon N-Channel MOS (-MOS)TK5A65DATK5A65DATK5A65DATK5A65DA1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.34 (typ.)(2) High forward transfer admittance: |Yfs| = 3.1 S (typ.)(3) Low leakage current: ID
8.2. Size:195K toshiba
tk5a65d.pdf
TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK5A65D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: Yfs = 2.6 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
8.3. Size:252K inchange semiconductor
tk5a65da.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A65DAITK5A65DAFEATURESLow drain-source on-resistance:RDS(ON) = 1.34 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATIN
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