TK5A65W MOSFET Datasheet: N-Ch, 650V, 5.2A. Full specification with pinout and replacement list

TK5A65W Specs and Replacement

Type Designator: TK5A65W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220SIS

TK5A65W substitution

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TK5A65W datasheet

..1. Size:371K toshiba
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TK5A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK5A65W TK5A65W TK5A65W TK5A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement mo... See More ⇒

..2. Size:252K inchange semiconductor
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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A65W ITK5A65W FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.17mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

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TK5A65DA MOSFETs Silicon N-Channel MOS ( -MOS ) TK5A65DA TK5A65DA TK5A65DA TK5A65DA 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.34 (typ.) (2) High forward transfer admittance Yfs = 3.1 S (typ.) (3) Low leakage current ID... See More ⇒

8.2. Size:195K toshiba
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TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK5A65D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.6 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒