Справочник MOSFET. TK5A65W

 

TK5A65W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK5A65W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10.5 nC
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 10 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-220SIS

 Аналог (замена) для TK5A65W

 

 

TK5A65W Datasheet (PDF)

 ..1. Size:371K  toshiba
 tk5a65w.pdf

TK5A65W TK5A65W

TK5A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK5A65WTK5A65WTK5A65WTK5A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement mo

 ..2. Size:252K  inchange semiconductor
 tk5a65w.pdf

TK5A65W TK5A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A65WITK5A65WFEATURESLow drain-source on-resistance: RDS(ON) = 1.2 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.17mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 8.1. Size:228K  toshiba
 tk5a65da.pdf

TK5A65W TK5A65W

TK5A65DAMOSFETs Silicon N-Channel MOS (-MOS)TK5A65DATK5A65DATK5A65DATK5A65DA1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.34 (typ.)(2) High forward transfer admittance: |Yfs| = 3.1 S (typ.)(3) Low leakage current: ID

 8.2. Size:195K  toshiba
 tk5a65d.pdf

TK5A65W TK5A65W

TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK5A65D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: Yfs = 2.6 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 8.3. Size:252K  inchange semiconductor
 tk5a65da.pdf

TK5A65W TK5A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A65DAITK5A65DAFEATURESLow drain-source on-resistance:RDS(ON) = 1.34 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATIN

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