TK5A65W - параметры транзистора MOSFET, его аналоги, datasheet

TK5A65W Datasheet (PDF)

..1. Size:371K toshiba
tk5a65w.pdf pdf_icon

TK5A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK5A65WTK5A65WTK5A65WTK5A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement mo

..2. Size:252K inchange semiconductor
tk5a65w.pdf pdf_icon

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A65WITK5A65WFEATURESLow drain-source on-resistance: RDS(ON) = 1.2 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.17mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

8.1. Size:228K toshiba
tk5a65da.pdf pdf_icon

TK5A65DAMOSFETs Silicon N-Channel MOS (-MOS)TK5A65DATK5A65DATK5A65DATK5A65DA1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.34 (typ.)(2) High forward transfer admittance: |Yfs| = 3.1 S (typ.)(3) Low leakage current: ID

8.2. Size:195K toshiba
tk5a65d.pdf pdf_icon

TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK5A65D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: Yfs = 2.6 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)