TK5A65W - аналоги, параметры транзистора - Справочник транзисторов

TK5A65W даташит

..1. Size:371K toshiba
tk5a65w.pdf pdf_icon

TK5A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK5A65W TK5A65W TK5A65W TK5A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement mo

..2. Size:252K inchange semiconductor
tk5a65w.pdf pdf_icon

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A65W ITK5A65W FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.17mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

8.1. Size:228K toshiba
tk5a65da.pdf pdf_icon

TK5A65DA MOSFETs Silicon N-Channel MOS ( -MOS ) TK5A65DA TK5A65DA TK5A65DA TK5A65DA 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.34 (typ.) (2) High forward transfer admittance Yfs = 3.1 S (typ.) (3) Low leakage current ID

8.2. Size:195K toshiba
tk5a65d.pdf pdf_icon

TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK5A65D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.6 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)