TK5P60W5 Datasheet and Replacement
Type Designator: TK5P60W5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 11.5 nC
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.99 Ohm
Package: DPAK
TK5P60W5 substitution
TK5P60W5 Datasheet (PDF)
tk5p60w5.pdf

TK5P60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK5P60W5TK5P60W5TK5P60W5TK5P60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 65 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.84 (typ.)by using Super Junction Structure :
tk5p60w.pdf

TK5P60WMOSFETs Silicon N-Channel MOS (DTMOS)TK5P60WTK5P60WTK5P60WTK5P60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.77 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance
tk5p65w.pdf

TK5P65WMOSFETs Silicon N-Channel MOS (DTMOS)TK5P65WTK5P65WTK5P65WTK5P65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.02 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement
Datasheet: TK56A12N1 , TK56E12N1 , TK58A06N1 , TK58E06N1 , TK5A60W , TK5A60W5 , TK5A65W , TK5P60W , K4145 , TK5P65W , TK5Q60W , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , TK62N60W5 .
Keywords - TK5P60W5 MOSFET datasheet
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