All MOSFET. TK5Q65W Datasheet

 

TK5Q65W Datasheet and Replacement


   Type Designator: TK5Q65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.22 Ohm
   Package: IPAK
 

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TK5Q65W Datasheet (PDF)

 ..1. Size:377K  toshiba
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TK5Q65W

TK5Q65WMOSFETs Silicon N-Channel MOS (DTMOS)TK5Q65WTK5Q65WTK5Q65WTK5Q65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.02 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

 9.1. Size:241K  toshiba
 tk5q60w.pdf pdf_icon

TK5Q65W

TK5Q60WMOSFETs Silicon N-Channel MOS (DTMOS)TK5Q60WTK5Q60WTK5Q60WTK5Q60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.77 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 9.2. Size:233K  inchange semiconductor
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TK5Q65W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK5Q60WITK5Q60WFEATURESLow drain-source on-resistance:RDS(on) 900m.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=0.27mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: TK58E06N1 , TK5A60W , TK5A60W5 , TK5A65W , TK5P60W , TK5P60W5 , TK5P65W , TK5Q60W , 5N60 , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , TK62N60W5 , TK62N60X , TK65G10N1 , TK65S04N1L .

History: GSM3456S | NTHS2101PT1G

Keywords - TK5Q65W MOSFET datasheet

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