TK60F08K3 Datasheet and Replacement
Type Designator: TK60F08K3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-220SM
TK60F08K3 substitution
TK60F08K3 Datasheet (PDF)
tk60f08k3.pdf

TK60F08K3MOSFETs Silicon N-channel MOS (U-MOS)TK60F08K3TK60F08K3TK60F08K3TK60F08K31. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.5 m (typ.) (VGS = 10 V)(2) Low leaka
Datasheet: TK5A60W , TK5A60W5 , TK5A65W , TK5P60W , TK5P60W5 , TK5P65W , TK5Q60W , TK5Q65W , IRFP260 , TK62J60W , TK62J60W5 , TK62N60W , TK62N60W5 , TK62N60X , TK65G10N1 , TK65S04N1L , TK6A60W .
History: STF40NF20 | RUH1H139R | BSC100N03MS | BSC019N04NSG | HM18P10 | SE30150B | SI4486EY
Keywords - TK60F08K3 MOSFET datasheet
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History: STF40NF20 | RUH1H139R | BSC100N03MS | BSC019N04NSG | HM18P10 | SE30150B | SI4486EY



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