TK62N60X PDF and Equivalents Search

 

TK62N60X Specs and Replacement

Type Designator: TK62N60X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 61.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO-247

TK62N60X substitution

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TK62N60X datasheet

 ..1. Size:245K  toshiba
 tk62n60x.pdf pdf_icon

TK62N60X

TK62N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK62N60X TK62N60X TK62N60X TK62N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.033 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit... See More ⇒

 7.1. Size:245K  toshiba
 tk62n60w.pdf pdf_icon

TK62N60X

TK62N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK62N60W TK62N60W TK62N60W TK62N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.033 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 7.2. Size:244K  toshiba
 tk62n60w5.pdf pdf_icon

TK62N60X

TK62N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK62N60W5 TK62N60W5 TK62N60W5 TK62N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 170 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.036 (typ.) by used to Super Junction St... See More ⇒

 9.1. Size:583K  ixys
 ixtk62n25.pdf pdf_icon

TK62N60X

IXTK 62N25 VDSS = 250 V High Current ID25 = 62 A MegaMOSTMFET RDS(on) = 35 m N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings TO-264 VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1.0 M 250 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) G ID25 TC = 25 C62 A D IDM TC = 25 C, pulse width... See More ⇒

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Detailed specifications: TK5P65W, TK5Q60W, TK5Q65W, TK60F08K3, TK62J60W, TK62J60W5, TK62N60W, TK62N60W5, SKD502T, TK65G10N1, TK65S04N1L, TK6A60W, TK6A65W, TK6A80E, TK6P60W, TK6P65W, TK6Q60W

Keywords - TK62N60X MOSFET specs

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