Справочник MOSFET. TK62N60X

 

TK62N60X Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TK62N60X
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 400 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 61.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для TK62N60X

   - подбор ⓘ MOSFET транзистора по параметрам

 

TK62N60X Datasheet (PDF)

 ..1. Size:245K  toshiba
 tk62n60x.pdf pdf_icon

TK62N60X

TK62N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK62N60XTK62N60XTK62N60XTK62N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.033 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

 7.1. Size:245K  toshiba
 tk62n60w.pdf pdf_icon

TK62N60X

TK62N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK62N60WTK62N60WTK62N60WTK62N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.033 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:244K  toshiba
 tk62n60w5.pdf pdf_icon

TK62N60X

TK62N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK62N60W5TK62N60W5TK62N60W5TK62N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 170 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.036 (typ.) by used to Super Junction St

 9.1. Size:583K  ixys
 ixtk62n25.pdf pdf_icon

TK62N60X

IXTK 62N25 VDSS = 250 VHigh CurrentID25 = 62 AMegaMOSTMFETRDS(on) = 35 mN-Channel Enhancement ModePreliminary Data SheetSymbol Test conditions Maximum ratingsTO-264VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1.0 M 250 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GID25 TC = 25C62 ADIDM TC = 25C, pulse width

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TK5P65W , TK5Q60W , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , TK62N60W5 , IRF9540N , TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , TK6P60W , TK6P65W , TK6Q60W .

History: IPS60R360PFD7S | UC1764 | SIHFB20N50K

 

 
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