TK6P60W Datasheet and Replacement
Type Designator: TK6P60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 12 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.82 Ohm
Package: TO-252
TK6P60W substitution
TK6P60W Datasheet (PDF)
tk6p60w.pdf

TK6P60WMOSFETs Silicon N-Channel MOS (DTMOS)TK6P60WTK6P60WTK6P60WTK6P60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.68 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance
tk6p60w.pdf

Isc N-Channel MOSFET Transistor TK6P60WFEATURESWith To-252(DPAK) packageLow input capacitance and gate charge100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source V
tk6p65w.pdf

TK6P65WMOSFETs Silicon N-Channel MOS (DTMOS)TK6P65WTK6P65WTK6P65WTK6P65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.89 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement
Datasheet: TK62N60W , TK62N60W5 , TK62N60X , TK65G10N1 , TK65S04N1L , TK6A60W , TK6A65W , TK6A80E , IRF530 , TK6P65W , TK6Q60W , TK6Q65W , TK70J04K3Z , TK72A08N1 , TK72A12N1 , TK72E08N1 , TK72E12N1 .
History: TK6Q60W | HCS90R300S
Keywords - TK6P60W MOSFET datasheet
TK6P60W cross reference
TK6P60W equivalent finder
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TK6P60W substitution
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History: TK6Q60W | HCS90R300S



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