TK7A65W MOSFET Datasheet: N-Ch, 650V, 6.8A. Full specification with pinout and replacement list

TK7A65W Specs and Replacement

Type Designator: TK7A65W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm

Package: TO-220SIS

TK7A65W substitution

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TK7A65W datasheet

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TK7A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK7A65W TK7A65W TK7A65W TK7A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.64 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement... See More ⇒

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TK7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK7A65D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 650 V) Enhancement mode Vth = 2.... See More ⇒

8.2. Size:253K inchange semiconductor
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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK7A65D ITK7A65D FEATURES Low drain-source on-resistance RDS(ON) = 0.8 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

9.1. Size:238K toshiba
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TK7A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK7A60W TK7A60W TK7A60W TK7A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.5 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancem... See More ⇒