Справочник MOSFET. TK7A65W

 

TK7A65W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK7A65W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 13 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.78 Ohm
   Тип корпуса: TO-220SIS

 Аналог (замена) для TK7A65W

 

 

TK7A65W Datasheet (PDF)

 ..1. Size:374K  toshiba
 tk7a65w.pdf

TK7A65W TK7A65W

TK7A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK7A65WTK7A65WTK7A65WTK7A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.64 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

 8.1. Size:202K  toshiba
 tk7a65d.pdf

TK7A65W TK7A65W

TK7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK7A65D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth = 2.

 8.2. Size:253K  inchange semiconductor
 tk7a65d.pdf

TK7A65W TK7A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A65DITK7A65DFEATURESLow drain-source on-resistance:RDS(ON) = 0.8 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:238K  toshiba
 tk7a60w.pdf

TK7A65W TK7A65W

TK7A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK7A60WTK7A60WTK7A60WTK7A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancem

 9.2. Size:238K  toshiba
 tk7a60w5.pdf

TK7A65W TK7A65W

TK7A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK7A60W5TK7A60W5TK7A60W5TK7A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 75 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.54 (typ.) by used to Super

 9.3. Size:253K  inchange semiconductor
 tk7a60w.pdf

TK7A65W TK7A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A60WITK7A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.5 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.35mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulato

 9.4. Size:253K  inchange semiconductor
 tk7a60w5.pdf

TK7A65W TK7A65W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A60W5ITK7A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.54 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.35mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

Другие MOSFET... TK6Q65W , TK70J04K3Z , TK72A08N1 , TK72A12N1 , TK72E08N1 , TK72E12N1 , TK7A60W , TK7A60W5 , IRFP250 , TK7A90E , TK7J90E , TK7P60W , TK7P60W5 , TK7P65W , TK7Q60W , TK7Q65W , TK7S10N1Z .

 

 
Back to Top