TK7J90E Datasheet and Replacement
Type Designator: TK7J90E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-3P
TK7J90E substitution
TK7J90E Datasheet (PDF)
tk7j90e.pdf

TK7J90EMOSFETs Silicon N-Channel MOS (-MOS)TK7J90ETK7J90ETK7J90ETK7J90E1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.6 (typ.)(2) Low leakage current : IDSS = 10 A (max) (VDS = 720 V)(3) Enhancement mode: Vth = 2.5
Datasheet: TK72A08N1 , TK72A12N1 , TK72E08N1 , TK72E12N1 , TK7A60W , TK7A60W5 , TK7A65W , TK7A90E , IRFP250 , TK7P60W , TK7P60W5 , TK7P65W , TK7Q60W , TK7Q65W , TK7S10N1Z , TK80A04K3L , TK8A60W .
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