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TK7J90E Specs and Replacement

Type Designator: TK7J90E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-3P

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TK7J90E datasheet

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TK7J90E

TK7J90E MOSFETs Silicon N-Channel MOS ( -MOS ) TK7J90E TK7J90E TK7J90E TK7J90E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.6 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 720 V) (3) Enhancement mode Vth = 2.5 ... See More ⇒

Detailed specifications: TK72A08N1, TK72A12N1, TK72E08N1, TK72E12N1, TK7A60W, TK7A60W5, TK7A65W, TK7A90E, IRFP250, TK7P60W, TK7P60W5, TK7P65W, TK7Q60W, TK7Q65W, TK7S10N1Z, TK80A04K3L, TK8A60W

Keywords - TK7J90E MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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