TK7Q60W MOSFET Datasheet: N-Ch, 600V, 7A. Full specification with pinout and replacement list

TK7Q60W Specs and Replacement

Type Designator: TK7Q60W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: IPAK

TK7Q60W substitution

- MOSFET ⓘ Cross-Reference Search

TK7Q60W datasheet

..1. Size:244K toshiba
tk7q60w.pdf pdf_icon

TK7Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK7Q60W TK7Q60W TK7Q60W TK7Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.5 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancem... See More ⇒

9.1. Size:380K toshiba
tk7q65w.pdf pdf_icon

TK7Q65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK7Q65W TK7Q65W TK7Q65W TK7Q65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.66 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement... See More ⇒

9.2. Size:234K inchange semiconductor
tk7q65w.pdf pdf_icon