TK7Q60W Datasheet and Replacement
Type Designator: TK7Q60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: IPAK
TK7Q60W substitution
TK7Q60W Datasheet (PDF)
tk7q60w.pdf

TK7Q60WMOSFETs Silicon N-Channel MOS (DTMOS)TK7Q60WTK7Q60WTK7Q60WTK7Q60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancem
tk7q65w.pdf

TK7Q65WMOSFETs Silicon N-Channel MOS (DTMOS)TK7Q65WTK7Q65WTK7Q65WTK7Q65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.66 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement
tk7q65w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK7Q65WITK7Q65WFEATURESLow drain-source on-resistance:RDS(on) 0.8.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: TK7A60W , TK7A60W5 , TK7A65W , TK7A90E , TK7J90E , TK7P60W , TK7P60W5 , TK7P65W , 13N50 , TK7Q65W , TK7S10N1Z , TK80A04K3L , TK8A60W , TK8A60W5 , TK8A65W , TK8P60W , TK8P60W5 .
History: SI7615CDN | STB10LN80K5 | IRF823FI | SML30B48 | IRHQ7110 | SWK15P03 | SSI4N90A
Keywords - TK7Q60W MOSFET datasheet
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History: SI7615CDN | STB10LN80K5 | IRF823FI | SML30B48 | IRHQ7110 | SWK15P03 | SSI4N90A



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