TK8Q60W MOSFET Datasheet: N-Ch, 600V, 8A. Full specification with pinout and replacement list

TK8Q60W Specs and Replacement

   Type Designator: TK8Q60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: IPAK

TK8Q60W substitution

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TK8Q60W datasheet

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TK8Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8Q60W TK8Q60W TK8Q60W TK8Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.42 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance... See More ⇒

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TK8Q65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8Q65W TK8Q65W TK8Q65W TK8Q65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.55 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance... See More ⇒

9.2. Size:234K inchange semiconductor
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