All MOSFET. TK8Q60W Datasheet

 

TK8Q60W Datasheet and Replacement


   Type Designator: TK8Q60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: IPAK
 

 TK8Q60W substitution

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TK8Q60W Datasheet (PDF)

 ..1. Size:301K  toshiba
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TK8Q60W

TK8Q60WMOSFETs Silicon N-Channel MOS (DTMOS)TK8Q60WTK8Q60WTK8Q60WTK8Q60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.42 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 9.1. Size:265K  toshiba
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TK8Q60W

TK8Q65WMOSFETs Silicon N-Channel MOS (DTMOS)TK8Q65WTK8Q65WTK8Q65WTK8Q65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.55 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 9.2. Size:234K  inchange semiconductor
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TK8Q60W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK8Q65WITK8Q65WFEATURESLow drain-source on-resistance:RDS(on) 0.67.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: TK7S10N1Z , TK80A04K3L , TK8A60W , TK8A60W5 , TK8A65W , TK8P60W , TK8P60W5 , TK8P65W , IRF830 , TK8Q65W , TK90S06N1L , TK9A65W , TK9A90E , TK9J90E , TK9P65W , TK9Q65W , TMA7N90 .

Keywords - TK8Q60W MOSFET datasheet

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