All MOSFET. TK8Q65W Datasheet

 

TK8Q65W MOSFET. Datasheet pdf. Equivalent

Type Designator: TK8Q65W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 80 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 7.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 16 pF

Maximum Drain-Source On-State Resistance (Rds): 0.67 Ohm

Package: IPAK

TK8Q65W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK8Q65W Datasheet (PDF)

0.1. tk8q65w.pdf Size:265K _toshiba

TK8Q65W
TK8Q65W

TK8Q65W MOSFETs Silicon N-Channel MOS (DTMOS) TK8Q65W TK8Q65W TK8Q65W TK8Q65W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.55 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhance

9.1. tk8q60w.pdf Size:301K _toshiba

TK8Q65W
TK8Q65W

TK8Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK8Q60W TK8Q60W TK8Q60W TK8Q60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhance

Datasheet: TK80A04K3L , TK8A60W , TK8A60W5 , TK8A65W , TK8P60W , TK8P60W5 , TK8P65W , TK8Q60W , 2SK2611 , TK90S06N1L , TK9A65W , TK9A90E , TK9J90E , TK9P65W , TK9Q65W , TMA7N90 , TMAN10N80 .

 

 
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