TK8Q65W MOSFET Datasheet: N-Ch, 650V, 7.8A. Full specification with pinout and replacement list

TK8Q65W Specs and Replacement

   Type Designator: TK8Q65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm
   Package: IPAK

TK8Q65W substitution

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TK8Q65W datasheet

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TK8Q65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8Q65W TK8Q65W TK8Q65W TK8Q65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.55 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance... See More ⇒

..2. Size:234K inchange semiconductor
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TK8Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8Q60W TK8Q60W TK8Q60W TK8Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.42 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance... See More ⇒

Detailed specifications: TK80A04K3L , TK8A60W , TK8A60W5 , TK8A65W , TK8P60W , TK8P60W5 , TK8P65W , TK8Q60W , 8N60 , TK90S06N1L , TK9A65W , TK9A90E , TK9J90E , TK9P65W , TK9Q65W , TMA7N90 , TMAN10N80 .