All MOSFET. TMAN10N80 Datasheet

 

TMAN10N80 Datasheet and Replacement


   Type Designator: TMAN10N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 214 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: TO-3PN
 

 TMAN10N80 substitution

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TMAN10N80 Datasheet (PDF)

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TMAN10N80

TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-

 9.1. Size:502K  trinnotech
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TMAN10N80

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A

 9.2. Size:512K  trinnotech
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TMAN10N80

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A

 9.3. Size:761K  trinnotech
 tman16n60.pdf pdf_icon

TMAN10N80

TMAN16N60 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A

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Datasheet: TK8Q65W , TK90S06N1L , TK9A65W , TK9A90E , TK9J90E , TK9P65W , TK9Q65W , TMA7N90 , 60N06 , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 , TMAN16N60 , TMAN16N60A , TMAN20N50 .

History: HM1P10MR | RUH1H139R | WMO60P03TS | BSC019N04NSG | SI2310A | HM2302F | TPN2R203NC

Keywords - TMAN10N80 MOSFET datasheet

 TMAN10N80 cross reference
 TMAN10N80 equivalent finder
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