TMAN10N80
MOSFET. Datasheet pdf. Equivalent
Type Designator: TMAN10N80
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 312
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 53
nC
trⓘ - Rise Time: 62
nS
Cossⓘ -
Output Capacitance: 214
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.05
Ohm
Package:
TO-3PN
TMAN10N80
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMAN10N80
Datasheet (PDF)
..1. Size:493K trinnotech
tman10n80.pdf 
TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-
9.1. Size:502K trinnotech
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tman12n80az.pdf
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