TMAN10N80 PDF and Equivalents Search

 

TMAN10N80 Specs and Replacement

Type Designator: TMAN10N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 214 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: TO-3PN

TMAN10N80 substitution

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TMAN10N80 datasheet

 ..1. Size:493K  trinnotech
 tman10n80.pdf pdf_icon

TMAN10N80

TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-... See More ⇒

 9.1. Size:502K  trinnotech
 tman12n80z.pdf pdf_icon

TMAN10N80

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A ... See More ⇒

 9.2. Size:512K  trinnotech
 tman11n90z.pdf pdf_icon

TMAN10N80

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A ... See More ⇒

 9.3. Size:761K  trinnotech
 tman16n60.pdf pdf_icon

TMAN10N80

TMAN16N60 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A ... See More ⇒

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Detailed specifications: TK8Q65W, TK90S06N1L, TK9A65W, TK9A90E, TK9J90E, TK9P65W, TK9Q65W, TMA7N90, IRFZ48N, TMAN11N90AZ, TMAN11N90Z, TMAN12N80AZ, TMAN12N80Z, TMAN15N50, TMAN16N60, TMAN16N60A, TMAN20N50

Keywords - TMAN10N80 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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