TMAN10N80 Datasheet and Replacement
Type Designator: TMAN10N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 214 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
Package: TO-3PN
TMAN10N80 substitution
TMAN10N80 Datasheet (PDF)
tman10n80.pdf
TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-
tman12n80z.pdf
TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A
tman11n90z.pdf
TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A
tman16n60.pdf
TMAN16N60 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A
Datasheet: TK8Q65W , TK90S06N1L , TK9A65W , TK9A90E , TK9J90E , TK9P65W , TK9Q65W , TMA7N90 , IRFZ48N , TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 , TMAN16N60 , TMAN16N60A , TMAN20N50 .
History: STD2NB60T4 | WMQ090NV6LG4
Keywords - TMAN10N80 MOSFET datasheet
TMAN10N80 cross reference
TMAN10N80 equivalent finder
TMAN10N80 lookup
TMAN10N80 substitution
TMAN10N80 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: STD2NB60T4 | WMQ090NV6LG4
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