All MOSFET. TMAN11N90AZ Datasheet

 

TMAN11N90AZ Datasheet and Replacement


   Type Designator: TMAN11N90AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 416 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 89 nS
   Cossⓘ - Output Capacitance: 297 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-3PN
 

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TMAN11N90AZ Datasheet (PDF)

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TMAN11N90AZ

TMAN11N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 11A

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TMAN11N90AZ

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A

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TMAN11N90AZ

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A

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TMAN11N90AZ

TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-

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Datasheet: TK90S06N1L , TK9A65W , TK9A90E , TK9J90E , TK9P65W , TK9Q65W , TMA7N90 , TMAN10N80 , STP65NF06 , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 , TMAN16N60 , TMAN16N60A , TMAN20N50 , TMAN20N50A .

History: RU30D20M3 | IRFB7446PBF | STI60N55F3 | NP60N04MUG | SNN4010D | HSBA3058 | NTTFS4C10N

Keywords - TMAN11N90AZ MOSFET datasheet

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