TMAN11N90AZ MOSFET Datasheet: N-Ch, 900V, 11A. Full specification with pinout and replacement list

TMAN11N90AZ Specs and Replacement

Type Designator: TMAN11N90AZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 416 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 89 nS

Cossⓘ - Output Capacitance: 297 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-3PN

TMAN11N90AZ substitution

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TMAN11N90AZ datasheet

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TMAN11N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 11A ... See More ⇒

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TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A ... See More ⇒

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TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-... See More ⇒