All MOSFET. TMAN11N90AZ Datasheet

 

TMAN11N90AZ Datasheet and Replacement


   Type Designator: TMAN11N90AZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 416 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 89 nS
   Cossⓘ - Output Capacitance: 297 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-3PN
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TMAN11N90AZ Datasheet (PDF)

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TMAN11N90AZ

TMAN11N90AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 11A

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TMAN11N90AZ

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 900V 11A

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TMAN11N90AZ

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A

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TMAN11N90AZ

TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: DM12N65C | H7N1002LM | AP6679GI-HF | ZVN0124ASTOA | SPD04N60S5 | FCPF7N60YDTU

Keywords - TMAN11N90AZ MOSFET datasheet

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