TMAN12N80Z MOSFET. Datasheet pdf. Equivalent

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TMAN12N80Z Datasheet (PDF)

1.1. tman12n80z.pdf Size:502K _upd-mosfet

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 800V 12A <0.65W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN12N80Z TO-3PN TMAN12N80Z RoHS Absolute Maximum Ratings Parameter Symbol TMAN12N80Z Unit Drain-Source Voltage VDS 800 V Gate-Source Voltage VG

1.2. tman12n80az.pdf Size:505K _upd-mosfet

TMAN12N80AZ N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 800V 12A < 0.65W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMAN12N80AZ TO-3PN TMAN12N80AZ RoHS Absolute Maximum Ratings Parameter Symbol TMAN12N80AZ Unit Drain-Source Voltage V

 5.1. tman16n60a.pdf Size:457K _upd-mosfet

TMAN16N60A N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 16A < 0.47W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMAN16N60A TO3PN TMAN16N60A RoHS Absolute Maximum Ratings Parameter Symbol TMAN16N60A Unit Drain-Source Voltage VDSS 600 V

5.2. tman11n90az.pdf Size:508K _upd-mosfet

TMAN11N90AZ N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 900V 11A < 0.9W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMAN11N90AZ TO-3PN TMAN11N90AZ RoHS Absolute Maximum Ratings Parameter Symbol TMAN11N90AZ Unit Drain-Source Voltage VD

 5.3. tman16n60.pdf Size:761K _upd-mosfet

TMAN16N60 N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 16A < 0.47W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN16N60 TO-3PN TMAN16N60 RoHS Absolute Maximum Ratings Parameter Symbol TMAN16N60 Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30

5.4. tman15n50.pdf Size:485K _upd-mosfet

TMAN15N50 N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 500V 14.2A <0.44W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TO-3PN D G S Device Package Marking Remark TMAN15N50 TO-3PN TMAN15N50 RoHS Absolute Maximum Ratings Parameter Symbol TMAN15N50 Unit Drain-Source

 5.5. tman11n90z.pdf Size:512K _upd-mosfet

TMAN11N90Z N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 900V 11A <0.95W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN11N90Z TO-3PN TMAN11N90Z RoHS Absolute Maximum Ratings Parameter Symbol TMAN11N90Z Unit Drain-Source Voltage VDS 900 V Gate-Source Voltage VG

5.6. tman10n80.pdf Size:493K _upd-mosfet

TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A  Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-

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