All MOSFET. TMAN20N50A Datasheet

 

TMAN20N50A MOSFET. Datasheet pdf. Equivalent

Type Designator: TMAN20N50A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 312 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 44 nC

Rise Time (tr): 61 nS

Drain-Source Capacitance (Cd): 283 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO-3PN

TMAN20N50A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMAN20N50A Datasheet (PDF)

1.1. tman20n50.pdf Size:484K _upd-mosfet

TMAN20N50A TMAN20N50A

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 500V 20A <0.3W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D G S Device Package Marking Remark TMAN20N50 TO-3PN TMAN20N50 RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N50 Unit Drain-Source Voltage VDS 500 V Gate-Source Voltag

1.2. tman20n50a.pdf Size:503K _upd-mosfet

TMAN20N50A TMAN20N50A

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge  100% avalanche tested 500V 20A < 0.3W  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN20N50A TO-3PN TMAN20N50A RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N50A Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±3

 3.1. tman20n60.pdf Size:694K _upd-mosfet

TMAN20N50A TMAN20N50A

TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 600V 20A <0.33W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D G S Device Package Marking Remark TMAN20N60 TO-3PN TMAN20N60 RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N60 Unit Drain-Source Voltage VDS 600 V Gate-Source Vo

3.2. tman20n60a.pdf Size:505K _upd-mosfet

TMAN20N50A TMAN20N50A

TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 20A < 0.33W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN20N60A TO-3PN TMAN20N60A RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N60A Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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