All MOSFET. TMAN20N50A Datasheet

 

TMAN20N50A MOSFET. Datasheet pdf. Equivalent

Type Designator: TMAN20N50A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 312 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 44 nC

Rise Time (tr): 61 nS

Drain-Source Capacitance (Cd): 283 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO-3PN

TMAN20N50A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMAN20N50A Datasheet (PDF)

1.1. tman20n50.pdf Size:484K _upd-mosfet

TMAN20N50A
TMAN20N50A

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 500V 20A <0.3W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D G S Device Package Marking Remark TMAN20N50 TO-3PN TMAN20N50 RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N50 Unit Drain-Source Voltage VDS 500 V Gate-Source Voltag

1.2. tman20n50a.pdf Size:503K _upd-mosfet

TMAN20N50A
TMAN20N50A

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge  100% avalanche tested 500V 20A < 0.3W  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN20N50A TO-3PN TMAN20N50A RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N50A Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±3

 3.1. tman20n60a.pdf Size:505K _upd-mosfet

TMAN20N50A
TMAN20N50A

TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 20A < 0.33W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN20N60A TO-3PN TMAN20N60A RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N60A Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS

3.2. tman20n60.pdf Size:694K _upd-mosfet

TMAN20N50A
TMAN20N50A

TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 600V 20A <0.33W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D G S Device Package Marking Remark TMAN20N60 TO-3PN TMAN20N60 RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N60 Unit Drain-Source Voltage VDS 600 V Gate-Source Vo

Datasheet: TMAN11N90AZ , TMAN11N90Z , TMAN12N80AZ , TMAN12N80Z , TMAN15N50 , TMAN16N60 , TMAN16N60A , TMAN20N50 , IRF8010 , TMAN20N60 , TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ .

 

 
Back to Top

 


TMAN20N50A
  TMAN20N50A
  TMAN20N50A
 

social 

LIST

Last Update

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |

 

 

 
Back to Top