TMAN20N50A Datasheet. Specs and Replacement

Type Designator: TMAN20N50A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 283 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-3PN

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TMAN20N50A datasheet

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TMAN20N50A

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A ... See More ⇒

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TMAN20N50A

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A ... See More ⇒

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TMAN20N50A

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TMAN20N50A

TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A ... See More ⇒

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Detailed specifications: TMAN11N90AZ, TMAN11N90Z, TMAN12N80AZ, TMAN12N80Z, TMAN15N50, TMAN16N60, TMAN16N60A, TMAN20N50, RU7088R, TMAN20N60, TMAN20N60A, TMAN23N50, TMAN23N50A, TMAN7N90, TMAN8N80, TMAN9N90, TMAN9N90AZ

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.