TMAN20N50A MOSFET. Datasheet pdf. Equivalent

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TMAN20N50A Datasheet (PDF)

1.1. tman20n50.pdf Size:484K _upd-mosfet

TMAN20N50 N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 500V 20A <0.3W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D G S Device Package Marking Remark TMAN20N50 TO-3PN TMAN20N50 RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N50 Unit Drain-Source Voltage VDS 500 V Gate-Source Voltag

1.2. tman20n50a.pdf Size:503K _upd-mosfet

TMAN20N50A N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge  100% avalanche tested 500V 20A < 0.3W  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN20N50A TO-3PN TMAN20N50A RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N50A Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±3

 3.1. tman20n60a.pdf Size:505K _upd-mosfet

TMAN20N60A N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 20A < 0.33W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN20N60A TO-3PN TMAN20N60A RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N60A Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS

3.2. tman20n60.pdf Size:694K _upd-mosfet

TMAN20N60 N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 600V 20A <0.33W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D G S Device Package Marking Remark TMAN20N60 TO-3PN TMAN20N60 RoHS Absolute Maximum Ratings Parameter Symbol TMAN20N60 Unit Drain-Source Voltage VDS 600 V Gate-Source Vo

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MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |